Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy

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Highly strained 3C-SiC/Si (001) epilayers of different thicknesses (0.1 μm-12.4 μm) prepared in a vertical reactor configuration by chemical vapor deposition (V-CVD) method were examined using Raman scattering spectroscopy (RSS). In the near backscattering geometry, our RSS results for “as-grown” epilayers revealed TO- and LO-phonon bands shifting towards lower frequencies by approximately ~2 cm-1 with respect to the “free-standing” films.

material sciences pdfRaman scattering data of optical phonons are carefully analyzed by using an elastic deformation theory with inputs of hydrostatic-stress coefficients from a realistic lattice dynamical approach that helped assess biaxial stress, in plane tensile- and normal compressive-strain, respectively. In each sample, the estimated value of strain is found at least two order of magnitude smaller than the one expected from lattice mismatch between the epilayer and substrate.


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